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ZXMN2B03E6
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GS
Limit
20
±8
Unit
V
V
Continuous drain current
@ V GS = 4.5V; T amb =25°C (b)
I D
5.4
A
@ V GS = 4.5V; T amb =70°C (b)
@ V GS = 4.5V; T amb =25°C (a)
4.3
4.3
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T amb =25°C (a)
Linear derating factor
Power dissipation at T amb =25°C (b)
Linear derating factor
Operating and storage temperature range
I DM
I S
I SM
P D
P D
T j , T stg
26
2.8
26
1.1
8.8
1.7
13.7
-55 to +150
A
A
A
W
mW/°C
W
mW/°C
° C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
ambient (a)
R JA
113
°C/W
Junction to ambient (b)
R JA
73
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
temperature.
Issue 1 - September 2006
? Zetex Semiconductors plc 2006
2
www.zetex.com
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